hardware, storage A technique used to support faster
sequential access to
DRAM by allowing any number of accesses
to the currently open row to be made after supplying the
rowaddress just once.
and the corresponding bits can be accessed. This is faster
than a full RAS-CAS cycle because only the shorter Column
Access Time needs to be obeyed.
Note that strictly speaking such a DRAM is not a true
randomaccess memory since accesses to the open row are faster than
to other locations.
EDO RAM is replacing Page Mode DRAM in many new
microcomputers.
[Is "Fast Page Mode" the same as "Page Mode"?]
(1996-10-06)